摘要:

In this letter, we report a quasi-vertical GaN Schottky barrier diode (SBD) fabricated on a hetero-epitaxial layer on silicon with low dislocation density and high carrier mobility. The reduction of dislocation is realized by inserting a thin layer with high density of Ga vacancies to promote the dislocation bending. The dislocation density is $1.6\times 10^8$ cm?2 with a GaN drift layer thickness of $4.5 μ \textm$ . The fabricated prototype GaN SBD delivers a high on/off current ratio of $10^10$ , a high forward current density of 1.6 kA/cm2@3 V, a low specific on-resistance of 1.1 $\textmØmega \cdot \text cm^2$ , and a low ideality factor of 1.23.