@article {8964312,
	title = {Quasi-Vertical GaN Schottky Barrier Diode on Silicon Substrate With 1010 High On/Off Current Ratio and Low Specific On-Resistance},
	journal = {IEEE Electron Device Letters},
	volume = {41},
	number = {3},
	year = {2020},
	month = {March},
	pages = {329-332},
	abstract = {In this letter, we report a quasi-vertical GaN Schottky barrier diode (SBD) fabricated on a hetero-epitaxial layer on silicon with low dislocation density and high carrier mobility. The reduction of dislocation is realized by inserting a thin layer with high density of Ga vacancies to promote the dislocation bending. The dislocation density is $1.6\times 10^8$ cm?2 with a GaN drift layer thickness of $4.5~μ \textm$ . The fabricated prototype GaN SBD delivers a high on/off current ratio of $10^10$ , a high forward current density of 1.6 kA/cm2@3 V, a low specific on-resistance of 1.1 $\textm{\O}mega \cdot \text cm^2$ , and a low ideality factor of 1.23.},
	keywords = {dislocation bending, GaN on Si, Schottky barrier diode, vertical structure},
	issn = {1558-0563},
	doi = {10.1109/LED.2020.2968392},
	author = {Y. Li and M. Wang and R. Yin and J. Zhang and M. Tao and B. Xie and Hao, Y. and Yang, X. and Wen, C.P. and B. Shen}
}
