新闻

Wei Lin's work on hydrogen-modulated step graded junction termination extension in GaN vertical p-n diodes has been published in IEEE EDL.

Wei Lin's work on hydrogen-modulated step graded junction termination extension in GaN vertical p-n diodes has been published in IEEE EDL.

七月 31, 2021

In this work, we proposed a step graded junction termination extension in vertical GaN pn diodes using hygroden treatment. The carrier modulation effect by H treatment and following thermal diffusion is successfully observed by conductance and KPFM measurement, from which the diffusion coefficient of H in p-GaN is also extracted. Finally, a 1500 V vertical GaN pn diode is achieved with the proposed edge termination. The paper can be accessed by: https://doi.org/10.1109/LED.2021.3091335.

Haozhe Sun and Qi Cheng's work on high sensitivity and linearity PH sensor based on hybrid GaN HEMT has been accepted for presentation in the coming MicroTAS 2021.

Haozhe Sun and Qi Cheng's work on high sensitivity and linearity PH sensor based on hybrid GaN HEMT has been accepted for presentation in the coming MicroTAS 2021.

七月 31, 2021

A new pH sensor with high pH sensitivity and linearity is proposed, which is based on an extended gate field effect transistor (EGFET) connected with a hybrid GaN high electron mobility transistor (HEMT) in series with a low-onset-voltage Schottky barrier diode (SBD) on the source side. The pH sensitivity of the proposed sensor is 0.017 A/mm-pH with the linearity of 0.37%. The work is in collaboration with Prof. Zhenchuan Yang

Ruiyuan's work on modelling of border traps in MOSFET is published in IEEE Electron Device Letters

五月 2, 2019

Impedance method is a powerful tool to investigate the properties in traps in MOS structure. However, the channel resistance with influence the analysis in lateral structures. In this work, we have proposed a compact model for devices with large channel resistance and the model is verifed in a normally-off GaN MOSFET. Based on the model, one could precisely calculate the trap density and distribution.

A new GaN MISHEMT process with high uniformity is developed by Sunhui et al. The work is in cooperation with Founder Microelectronics.

A new GaN MISHEMT process with high uniformity is developed by Sunhui et al. The work is in cooperation with Founder Microelectronics.

九月 15, 2018

With the high-quality Si3N4 dielectric by low-pressure chemical vapor deposition (LPCVD) and damage free, self-terminating passivation layer etching at the gate area, the MIS-HEMTs on 150 mm Si substrate demonstrate excellent output performance and good uniformity. The degradation of dynamic on-resistance is only about 42% at a quiescent drain bias of 600 V.

Linwei's work on non-destructive measurement of the transport property of 2DEG in GaN HEMT has been accepted for publication in IEEE Transactions on Electron Devices. Congratulations!

六月 7, 2018

This work introduces an innovative technique for non-destructive evaluation of two-dimensional electron gas (2DEG) quality on GaN-based HEMT wafer by mercury probes, which has huge utility value in manufacturing. As demonstrations, the carrier density dependent sheet resistance and the mobility of 2DEG are extracted with accuracy by measuring the frequency and voltage dependence of the heterostructure capacitance with two concentric-circle Schottky contacts.