八月 2, 2019
In this work, we found that high temperature grown LPCVD SiN could induce large density of border traps and an in-situ MOCVD grown SiN interlayer could help to improve the stability.
In this work, we found that high temperature grown LPCVD SiN could induce large density of border traps and an in-situ MOCVD grown SiN interlayer could help to improve the stability.