"Low temperature dynamic degradation behavior of carbon-doped GaN HEMTs" has been published in IEEE TED.

七月 31, 2021

By collaborating with Prof. Xinbo Zhou in ShanghaiTech University,  we have shown that the dynamic degradation of carbon-doped GaN HEMT is weakened at low temerature due to suppressed injection process. The paper can be accessed by https://doi.org/10.1109/TED.2021.3077345