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Yue Li's work on quasi-vertical GaN SBD on silicon is published on IEEE Electron Device Letters

三月 2, 2020
Yue Li's work on quasi-vertical GaN SBD on silicon is published on IEEE Electron Device Letters

In this work, we have demonstrated a high performance quasi-veritical GaN SBD on silicon substrate with 1010 on/off ratio by reducing the dislocation density in the drift layer with a dislocation filter layer. The material is grown by groups in School of Physics, Peking University.