<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Y. Li</style></author><author><style face="normal" font="default" size="100%">M. Wang</style></author><author><style face="normal" font="default" size="100%">R. Yin</style></author><author><style face="normal" font="default" size="100%">J. Zhang</style></author><author><style face="normal" font="default" size="100%">M. Tao</style></author><author><style face="normal" font="default" size="100%">B. Xie</style></author><author><style face="normal" font="default" size="100%">Hao, Y.</style></author><author><style face="normal" font="default" size="100%">Yang, X.</style></author><author><style face="normal" font="default" size="100%">Wen, C.P.</style></author><author><style face="normal" font="default" size="100%">B. Shen</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Quasi-Vertical GaN Schottky Barrier Diode on Silicon Substrate With 1010 High On/Off Current Ratio and Low Specific On-Resistance</style></title><secondary-title><style face="normal" font="default" size="100%">IEEE Electron Device Letters</style></secondary-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">dislocation bending</style></keyword><keyword><style  face="normal" font="default" size="100%">GaN on Si</style></keyword><keyword><style  face="normal" font="default" size="100%">Schottky barrier diode</style></keyword><keyword><style  face="normal" font="default" size="100%">vertical structure</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">2020</style></year><pub-dates><date><style  face="normal" font="default" size="100%">March</style></date></pub-dates></dates><number><style face="normal" font="default" size="100%">3</style></number><volume><style face="normal" font="default" size="100%">41</style></volume><pages><style face="normal" font="default" size="100%">329-332</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">In this letter, we report a quasi-vertical GaN Schottky barrier diode (SBD) fabricated on a hetero-epitaxial layer on silicon with low dislocation density and high carrier mobility. The reduction of dislocation is realized by inserting a thin layer with high density of Ga vacancies to promote the dislocation bending. The dislocation density is $1.6\times 10^8$ cm?2 with a GaN drift layer thickness of $4.5 μ \textm$ . The fabricated prototype GaN SBD delivers a high on/off current ratio of $10^10$ , a high forward current density of 1.6 kA/cm2@3 V, a low specific on-resistance of 1.1 $\textmØmega \cdot \text cm^2$ , and a low ideality factor of 1.23.</style></abstract></record></records></xml>