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Bias-Dependent Conduction-Induced Bimodal Weibull Distribution of the Time-Dependent Dielectric Breakdown in GaN MIS-HEMTs

Citation:

Sun H, Lei W, Chen J, Jin Y, Wang M. Bias-Dependent Conduction-Induced Bimodal Weibull Distribution of the Time-Dependent Dielectric Breakdown in GaN MIS-HEMTs. IEEE TRANSACTIONS ON ELECTRON DEVICES [Internet]. 2022.

摘要:

In this paper, we reported the mechanism of a bimodal Weibull distribution for TDDB of gate dielectric in GaN MISHEMT. It is shown that the properties of traps in the dielectric layer would have a great influence on the long time reliability and life time prediction process. 

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