<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Sun, Haozhe</style></author><author><style face="normal" font="default" size="100%">Wen Lei</style></author><author><style face="normal" font="default" size="100%">Jianguo Chen</style></author><author><style face="normal" font="default" size="100%">Jin, Yufeng</style></author><author><style face="normal" font="default" size="100%">Wang, Maojun</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Bias-Dependent Conduction-Induced Bimodal Weibull Distribution of the Time-Dependent Dielectric Breakdown in GaN MIS-HEMTs</style></title><secondary-title><style face="normal" font="default" size="100%">IEEE TRANSACTIONS ON ELECTRON DEVICES</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2022</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://ieeexplore.ieee.org/document/9882038</style></url></web-urls></urls><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">In this paper, we reported the mechanism of a bimodal Weibull distribution for&amp;nbsp;TDDB&amp;nbsp;of gate dielectric in GaN MISHEMT. It is shown that the properties of traps in the dielectric layer would have a great influence on the long time reliability and life time prediction process.&amp;nbsp;</style></abstract></record></records></xml>