@article {30943,
	title = {Bias-Dependent Conduction-Induced Bimodal Weibull Distribution of the Time-Dependent Dielectric Breakdown in GaN MIS-HEMTs},
	journal = {IEEE TRANSACTIONS ON ELECTRON DEVICES},
	year = {2022},
	abstract = {In this paper, we reported the mechanism of a bimodal Weibull distribution for\&nbsp;TDDB\&nbsp;of gate dielectric in GaN MISHEMT. It is shown that the properties of traps in the dielectric layer would have a great influence on the long time reliability and life time prediction process.\&nbsp;},
	url = {https://ieeexplore.ieee.org/document/9882038},
	author = {Sun, Haozhe and Wen Lei and Jianguo Chen and Jin, Yufeng and Wang, Maojun}
}
