Cheng Q, Wang M, Tao M, Yin R, Li Y, Yang N, Xu W, Gao C, Hao Y, Yang Z.
Planar Dual Gate GaN HEMT Cascode Amplifier as a Voltage Readout pH Sensor With High and Tunable Sensitivities. IEEE Electron Device Letters. 2020;41:485-488.
Li Y, Wang M, Yin R, Zhang J, Tao M, Xie B, Hao Y, Yang X, Wen CP, Shen B.
Quasi-Vertical GaN Schottky Barrier Diode on Silicon Substrate With 1010 High On/Off Current Ratio and Low Specific On-Resistance. IEEE Electron Device Letters. 2020;41:329-332.
AbstractIn this letter, we report a quasi-vertical GaN Schottky barrier diode (SBD) fabricated on a hetero-epitaxial layer on silicon with low dislocation density and high carrier mobility. The reduction of dislocation is realized by inserting a thin layer with high density of Ga vacancies to promote the dislocation bending. The dislocation density is $1.6\times 10^8$ cm?2 with a GaN drift layer thickness of $4.5 μ \textm$ . The fabricated prototype GaN SBD delivers a high on/off current ratio of $10^10$ , a high forward current density of 1.6 kA/cm2@3 V, a low specific on-resistance of 1.1 $\textmØmega \cdot \text cm^2$ , and a low ideality factor of 1.23.
