Performance Enhancement of Normally-Off Al2O3/AlN/GaNMOS-Channel-HEMTs with an ALD-Grown AlN Interfacial Layer

Citation:

Liu S, Yang S, Tang Z, Jiang Q, Liu C, Wang M, Chen KJ. Performance Enhancement of Normally-Off Al2O3/AlN/GaNMOS-Channel-HEMTs with an ALD-Grown AlN Interfacial Layer, in 2014 IEEE 26TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & IC'S (ISPSD). IEEE; 2014:362-365.

摘要:

In this work, the performance of GaN-based MOS-Channel-HEMTs (MOSC-HEMTs) are shown to be greatly improved by a thin ALD-grown AlN interfacial layer inserted between the amorphous Al2O3 gate dielectric and GaN-channel. The single-crystalline AlN interfacial layer effectively blocks oxygen from the GaN surface and avoids the formation of detrimental Ga-O bonds. Frequency-dispersion in C-V characteristics has been effectively suppressed. The maximum drain current and field-effect mobility are boosted from 410 mA/mm and 98 cm(2)/V.s in a conventional Al2O3/GaN MOSC-HEMT to 660 mA/mm and 165 cm(2)/V.s in an Al2O3/AlN/GaN MOSC-HEMT, owing to improved interface quality. The devices also deliver a high ON/OFF current ratio of similar to 10(10), and significantly reduced dynamic on-resistance degradation.

附注:

IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD), Waikoloa, HI, JUN 15-19, 2014