@conference { ISI:000346735500089,
	title = {Performance Enhancement of Normally-Off Al2O3/AlN/GaNMOS-Channel-HEMTs with an ALD-Grown AlN Interfacial Layer},
	booktitle = {2014 IEEE 26TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES \& IC{\textquoteright}S (ISPSD)},
	series = {Proceedings of the International Symposium on Power Semiconductor Devices \& ICs},
	year = {2014},
	note = {IEEE 26th International Symposium on Power Semiconductor Devices \& IC{\textquoteright}s (ISPSD), Waikoloa, HI, JUN 15-19, 2014},
	pages = {362-365},
	publisher = {IEEE},
	organization = {IEEE},
	abstract = {In this work, the performance of GaN-based MOS-Channel-HEMTs (MOSC-HEMTs) are shown to be greatly improved by a thin ALD-grown AlN interfacial layer inserted between the amorphous Al2O3 gate dielectric and GaN-channel. The single-crystalline AlN interfacial layer effectively blocks oxygen from the GaN surface and avoids the formation of detrimental Ga-O bonds. Frequency-dispersion in C-V characteristics has been effectively suppressed. The maximum drain current and field-effect mobility are boosted from 410 mA/mm and 98 cm(2)/V.s in a conventional Al2O3/GaN MOSC-HEMT to 660 mA/mm and 165 cm(2)/V.s in an Al2O3/AlN/GaN MOSC-HEMT, owing to improved interface quality. The devices also deliver a high ON/OFF current ratio of similar to 10(10), and significantly reduced dynamic on-resistance degradation.},
	isbn = {978-1-4799-2918-4},
	issn = {1063-6854},
	author = {Liu, Shenghou and Yang, Shu and Tang, Zhikai and Jiang, Qimeng and Liu, Cheng and Wang, Maojun and Chen, Kevin J.}
}
