<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>47</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Liu, Shenghou</style></author><author><style face="normal" font="default" size="100%">Yang, Shu</style></author><author><style face="normal" font="default" size="100%">Tang, Zhikai</style></author><author><style face="normal" font="default" size="100%">Jiang, Qimeng</style></author><author><style face="normal" font="default" size="100%">Liu, Cheng</style></author><author><style face="normal" font="default" size="100%">Wang, Maojun</style></author><author><style face="normal" font="default" size="100%">Chen, Kevin J.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Performance Enhancement of Normally-Off Al2O3/AlN/GaNMOS-Channel-HEMTs with an ALD-Grown AlN Interfacial Layer</style></title><secondary-title><style face="normal" font="default" size="100%">2014 IEEE 26TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES &amp; IC'S (ISPSD)</style></secondary-title><tertiary-title><style face="normal" font="default" size="100%">Proceedings of the International Symposium on Power Semiconductor Devices &amp; ICs</style></tertiary-title></titles><dates><year><style  face="normal" font="default" size="100%">2014</style></year></dates><publisher><style face="normal" font="default" size="100%">IEEE</style></publisher><pages><style face="normal" font="default" size="100%">362-365</style></pages><isbn><style face="normal" font="default" size="100%">978-1-4799-2918-4</style></isbn><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">In this work, the performance of GaN-based MOS-Channel-HEMTs (MOSC-HEMTs) are shown to be greatly improved by a thin ALD-grown AlN interfacial layer inserted between the amorphous Al2O3 gate dielectric and GaN-channel. The single-crystalline AlN interfacial layer effectively blocks oxygen from the GaN surface and avoids the formation of detrimental Ga-O bonds. Frequency-dispersion in C-V characteristics has been effectively suppressed. The maximum drain current and field-effect mobility are boosted from 410 mA/mm and 98 cm(2)/V.s in a conventional Al2O3/GaN MOSC-HEMT to 660 mA/mm and 165 cm(2)/V.s in an Al2O3/AlN/GaN MOSC-HEMT, owing to improved interface quality. The devices also deliver a high ON/OFF current ratio of similar to 10(10), and significantly reduced dynamic on-resistance degradation.</style></abstract><notes><style face="normal" font="default" size="100%">IEEE 26th International Symposium on Power Semiconductor Devices &amp; IC's (ISPSD), Waikoloa, HI, JUN 15-19, 2014</style></notes><custom7><style face="normal" font="default" size="100%">000346735500089</style></custom7></record></records></xml>