Citation:
Liang Z, Tang K, Dong J, Li Q, Zhou Y, Zhu R, Wu Y, Han D, HUANG R. A Novel High-Endurance FeFET Memory Device Based on ZrO2 Anti-Ferroelectric and IGZO Channel, in 2021 IEEE International Electron Devices Meeting (IEDM).; 2021:17.3.1-17.3.4.