@conference {9720627,
	title = {A Novel High-Endurance FeFET Memory Device Based on ZrO2 Anti-Ferroelectric and IGZO Channel},
	booktitle = {2021 IEEE International Electron Devices Meeting (IEDM)},
	year = {2021},
	pages = {17.3.1-17.3.4},
	doi = {10.1109/IEDM19574.2021.9720627},
	author = {Liang, Zhongxin and Tang, Kechao and Dong, Junchen and Li, Qijun and Zhou, Yuejia and Zhu, Runteng and Wu, Yanqing and Han, Dedong and Ru HUANG}
}
