科研/Research

课题组拟通过材料生长、器件设计和制备流程等层面的创新,结合多角度表征和定量模型分析方法,致力于解决前沿微纳电子器件的核心问题,推动高性能存储和传感技术的应用。研究重点包括:

  • 高质量铪基铁电薄膜外延生长
  • FeFET铁电/半导体界面表征与优化
  • 相变氧化物在存储和传感器件中的应用

Our research is primarily based on innovations in materials growth, device design and fabrication process, combined with multi-perspective characterization and quantitative modelling approaches. We are dedicated to solve the key problems in emerging nano-electronic devices, thus facilitating the applications of high-performance memory and sensing technology. The current focus of our research are:

  • Epitaxy growth of high quality hafnium-based ferroelectric thin film
  • Characterization and optimization of FeFET semiconductor interface
  • Application of phase transition oxides in memory and sensor devices