I. 氧化铪基铁电材料与器件

基于氧化铪铁电材料的存储器件具有超低功耗、小尺寸、高速度、非易失性等优势，在新一代集成电路中具有强大应用前景。课题组以氧化铪基铁电晶体管器件（FeFET）为核心，深入研究铁电材料与器件的物理原理，致力于解决FeFET器件和集成的核心挑战，并探索其在集成电路中的创新应用。本方向的研究重点包括：

• 基于新生长方法和表征技术的铁电材料原理研究
• 高耐久性FeFET器件制备与集成
• 面向新型计算架构的器件-阵列-电路协同优化

II. 基于相变氧化物的新型器件与架构

二氧化钒（VO₂）的金属-绝缘体相转变具有丰富的物理特性，可实现力学，光学，电学，热学等属性的智能调控与多场耦合，在先进存储，类脑计算，传感器和热能管理等领域具有广泛应用。课题组将以基于二氧化钒的红外传感器为核心，与铁电器件研究方向结合，探索面向感存算一体化的新型器件与架构。本方向的研究重点包括：

• 高性能红外传感器与感存算一体化设计
• 基于铁电-相变耦合的新原理器件

本课题组长期招收博士后研究员、硕士/博士研究生、本科生，欢迎感兴趣的同学和年轻学者联系：tkch@pku.edu.cn

I. Hafnium oxide based ferroelectric materials and devices 

Ferroelectric memories based on hafnium oxide(HfO₂) have the advantages of ultra-low power consumption, small-scale, high speed, and non-volatility, and are promising for applications in  next-generation integrated circuit. With research centered on HfO2-based ferroelectric field-effect transistor (FeFET), our group investigates the physical mechanism in ferroelectric materials and devices, aims to solve the key challenge associated with the FeFET device and integration, and discovers innovative application in integrated circuit. The research focus of this direction includes:

• Study of ferroelectric materials mechanisms based on novel fabrication and characterization techniques
• Fabrication and integration of high endurance FeFETs
• Device-Array-Circuit co-optimization for novel computing architecture

II. Novel device and architecture based on phase change oxide

The metal-insulator phase transition of vanadium dioxide(VO₂) displays various physical characteristics, which could realize the intelligent control of mechanical, optical, electrical and thermal properties and multi-field coupling. Therefore VO₂ has extensive applications in advanced memory, brain-like computing, sensor and thermal management. Our group focuses on infrared sensor based on VO₂, and by combining with ferroelectric devices, we explore new device and architecture toward in-sensor memory and computing. The research focus of this direction includes:

• Design of high-performance infrared sensor and in-sensor computing
• New principle devices based on coupling of ferroelectrics and phase change materials

For prospective postdoctoral scholars, PhD students and undergraduate students, please contact: tkch@pku.edu.cn