2024/11/27
(From left to right: Jinghao Yang, Liang Chen, Kechao Tang, Hanyong Shao, Zhiyuan Ning, Runteng Zhu, Weiqin Huang, Siyuan Qi, Wenpu Luo, Zhiqi Liu, Yuejia Zhou, Xiaojian Xu)
2024/3/2
(From left to right: Runteng Zhu, Yuejia Zhou, Zhiqi Liu, Weiqin Huang, Wenpu Luo, Hanyong Shao, Jinghao Yang, Liang Chen, Kechao Tang, Xiaojian Xu, Zhiyuan Ning)
2023/7/17
(From left to right: Kechao Tang, Jinghao Yang, Wenpu Luo, Weiqin Huang, Runteng Zhu, Hanyong Shao, Yuejia Zhou )
2022/9/27
(From left to right: Wenpu Luo, Weiqin Huang, Hanyong Shao, Liang Chen, Kechao Tang, Yuejia Zhou, Runteng Zhu, Jinghao Yang)
2022/1/24
(From left to right: Linbo Shan, Zhongxin Liang, Kechao Tang, Liang Chen, Yuejia Zhou, Runteng Zhu)
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Liang Chen（陈亮）, Postdoctoral scholar (former PhD student of the group)
Year of graduate: 2023
Area of Research: Advanced engineering and application of HfO2 ferroelectric materials
Linbo Shan（单林波），PhD student (Co-advised)
Year of enrollment: 2020
Area of Research: Application of VO2 in neuromorphic computing
Yuejia Zhou（周粤佳）, PhD student
Year of enrollment: 2022
Area of Research: Optimization and integration of Si based FeFETs
Jinghao Yang（杨璟昊）, PhD student
Year of enrollment: 2022
Area of Research: Infared devices based on novel materials and in-sensor computing
Hanyong Shao（邵瀚雍）, PhD student (Co-advised)
Year of enrollment: 2022
Area of Research: FeFETs for IoT edge security applications
Runteng Zhu（朱润腾）, PhD student
Year of enrollment: 2023
Area of Research: FeFETs based on semiconductor oxide channel
Wenpu Luo（罗文浦）, PhD student
Year of enrollment: 2023
Area of Research: Mechanisms of charge traps in FeFETs
Weiqin Huang（黄伟钦），PhD student
Year of enrollment: 2024
Area of Research: Defects and phase engineering in HfO2 Ferroelectric materials
Xiaojian Xu（徐晓健），PhD student
Year of enrollment: 2024
Area of Research: Characterization of ferroelectric devices
Zhiqi Liu（刘芷淇），PhD student
Year of enrollment: 2024
Area of Research: Engineering of Mott transistion materials for sensing applications
Zhiyuan Ning（宁致远），pre-enrolled PhD student
Year of enrollment: 2025
Area of Research: FeFETs for computing-in-memory applications
Siyuan Qi（齐思远），pre-enrolled PhD student
Year of enrollment: 2025
Area of Research: Novel ferroelectric materials and processing method
Alumni:
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Dr. Zhongxin Liang （梁中新）(Co-advised)
Year of graduate: 2022
Currently at Huawei Technologies Co.