成员/members

2024/3/2 

(From left to right: Runteng Zhu, Yuejia Zhou, Zhiqi Liu, Weiqin Huang, Wenpu Luo, Hanyong Shao, Jinghao Yang, Liang Chen, Kechao Tang, Xiaojian Xu, Zhiyuan Ning)

2023/7/17 

(From left to right: Kechao Tang, Jinghao Yang, Wenpu Luo, Weiqin Huang, Runteng Zhu, Hanyong Shao, Yuejia Zhou )

2022/9/27 

(From left to right: Wenpu Luo, Weiqin Huang, Hanyong Shao, Liang Chen, Kechao Tang, Yuejia Zhou, Runteng Zhu, Jinghao Yang)

2022/1/24

(From left to right: Linbo Shan, Zhongxin Liang, Kechao Tang, Liang Chen, Yuejia Zhou, Runteng Zhu)

Current members
-----------------------------------------
Liang Chen(陈亮), Postdoctoral scholar (former PhD student of the group)
Year of graduate: 2023
Area of Research: Advanced engineering and application of HfO2 ferroelectric materials

Linbo Shan(单林波),PhD student (Co-advised)
Year of enrollment: 2020
Area of Research: Application of VO2 in neuromorphic computing

Yuejia Zhou(周粤佳), PhD student 
Year of enrollment: 2022
Area of Research: Optimization and integration of Si based FeFETs
Jinghao Yang(杨璟昊), PhD student 
Year of enrollment: 2022
Area of Research: Infared devices based on novel materials and in-sensor computing
Hanyong Shao(邵瀚雍), PhD student (Co-advised)
Year of enrollment: 2022
Area of Research:  FeFETs for IoT edge security applications

Runteng Zhu(朱润腾),  PhD student
Year of enrollment: 2023
Area of Research: FeFETs based on semiconductor oxide channel
Wenpu Luo(罗文浦),  PhD student
Year of enrollment: 2023
Area of Research: Mechanisms of charge traps in FeFETs

Weiqin Huang(黄伟钦),PhD student
Year of enrollment: 2024
Area of Research: Defects and phase engineering in HfO2 Ferroelectric materials
Xiaojian Xu(徐晓健),PhD student
Year of enrollment: 2024
Area of Research: Characterization of ferroelectric devices
Zhiqi Liu(刘芷淇),PhD student
Year of enrollment: 2024
Area of Research: Engineering of Mott transistion materials for sensing applications

Zhiyuan Ning(宁致远),pre-enrolled PhD student
Year of enrollment: 2025
Area of Research: FeFETs for computing-in-memory applications
Siyuan Qi(齐思远),pre-enrolled PhD student
Year of enrollment: 2025
Area of Research: Novel ferroelectric materials and processing method
Alumni:
------------------------------------------
Dr. Zhongxin Liang (梁中新)(Co-advised)
Year of graduate: 2022
Currently at Huawei Technologies Co.