A Novel High-Endurance FeFET Memory Device Based on ZrO2 Anti-Ferroelectric and IGZO Channel - Liang, Zhongxin; Tang, Kechao; Dong, Junchen; Li, Qijun; Zhou, Yuejia; Zhu, Runteng; Wu, Yanqing; Han, Dedong; Ru HUANG (2021 IEEE International Electron Devices Meeting (IEDM), 2021)