Citation:
Zhou Y, Zhu R, Luo W, Xu X, Qi S, Ning Z, Chen L, Shao H, Tang K, HUANG R. 3D NOR-Type FeFETs with Record Endurance of 1011, Fast Erase of 50 ns, and Immediate Read-After-Write for In-Memory Learning, in 2025 Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits).; 2025:1-3.