Tang K, Ni ZY, Liu QH, Quhe RG, Zheng QY, Zheng JX, Fei RX, Gao ZX, Lu J.
Electronic and transport properties of a biased multilayer hexagonal boron nitride. The European Physical Journal B [Internet]. 2012;85:301.
链接(Link)AbstractWe explore the electronic and transport properties out of a biased multilayer hexagonal boron nitride (h-BN) by first-principles calculations. The band gaps of multilayer h-BN decrease almost linearly with increasing perpendicular electric field, irrespective of the layer number N and stacking manner. The critical electric filed (E0) required to close the band gap decreases with the increasing N and can be approximated by E0 = 3.2 / (N − 1) (eV). We provide a quantum transport simulation of a dual-gated 4-layer h-BN with graphene electrodes. The transmission gap in this device can be effectively reduced by double gates, and a high on-off ratio of 3000 is obtained with relatively low voltage. This renders biased MLh-BN a promising channel in field effect transistor fabrication.