@conference {11074820,
	title = {3D NOR-Type FeFETs with Record Endurance of 1011, Fast Erase of 50 ns, and Immediate Read-After-Write for In-Memory Learning},
	booktitle = {2025 Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)},
	year = {2025},
	pages = {1-3},
	keywords = {Artificial intelligence, Degradation, Energy efficiency, FeFETs, Integrated circuit reliability, Next generation networking, Optimization, Three-dimensional displays, Very large scale integration},
	doi = {10.23919/VLSITechnologyandCir65189.2025.11074820},
	author = {Zhou, Yuejia and Zhu, Runteng and Luo, Wenpu and Xu, Xiaojian and Qi, Siyuan and Ning, Zhiyuan and Liang Chen and Shao, Hanyong and Tang, Kechao and Ru HUANG}
}
