Lab Publications

2026
He Y, Huang Z, Li M, WANG R, Cheng Z. Thermal Conductivity Mapping of Interconnects and Active Layers of Logic Chips, in EDTM. IEEE; 2026.
Guo X, Chen Z, Huang Z, Wang Y, Liu J, Cheng Z. High Thermal Conductivity in Back-End-of-Line Compatible AlN Thin Films. arXiv preprint arXiv:2603.07115. 2026.
Wei Y, Xu H, Zhang X, Wang W, Cheng Z. Ultralow and Tunable Thermal Conductivity of Parylene C for Thermal Insulation in Advanced Packaging. arXiv preprint arXiv:2603.03737. 2026.
Liu J, Huang Z, Yang L, Zhang Y, Zhang X, Zhang K, Guo X, Wang Y, Zhou H, Zhang J. Ion Implantation Enhanced Nucleation Facilitates Heat Transport across Atomically-Sharp Semiconductor Interfaces. arXiv preprint arXiv:2602.13827. 2026.
Zhang X, Chang L, Li L, Cheng Z. Thermal conductance across bonded SiOx-SiOx interfaces in hybrid bonding process. arXiv preprint arXiv:2601.03106. 2026.
Huang Z, Liang J, Wang Y, Sun Z, Shigekawa N, Li M, WANG R, Cheng Z. Experimental Observation of Extremely Strong Defect-Phonon Scatterings in Cubic SiC Single Crystals. Applied Physics Reviews. 2026.
2025
Huang Z, Yang K, He Y, Dong Z, Sun Z, TANG X, Li M, WANG R, Cheng Z. First Demonstration of Three-Dimensional Thermal Conductivity Distribution Measurements of Interconnect Stacks Down to 3 nm Process Nodes, in IEEE IEDM.; 2025.
Zou Z, Tao H, Zhang J, Wu R, Cai L, Cheng Z, Hao M. Nonmonotonic phonon thermal conductivity modulated by electron–phonon interaction in graphene/h-BN heterostructures. Applied Physics Letters. 2025;127(13).
Moriyama C, Cheng Z, Huang Z, Ohno Y, Inoue K, Nagai Y, Shigekawa N, Liang J. Direct Integration of Polycrystalline Diamond With 3C‐SiC for Enhanced Thermal Management in GaN HEMTs: Impact of Grain Structure and Interface Engineering. Advanced Materials Technologies. 2025;10(21):e00437.
Zhou H, Zhang C, Zhang K, Huang Z, Liu F, Zhou M, Gong H, Tang S, Liu W, Wang B. High power density gallium nitride radio frequency transistors via enhanced nucleation in heteroepitaxy. Nature Communications. 2025.
Huang Z, Yang Y, Sheng D, Li H, Wang Y, Sun Z, Li M, WANG R, HUANG R, Cheng Z. Thermal Conductivity of Cubic Silicon Carbide Single Crystals Heavily Doped by Nitrogen. Journal of Applied Physics. 2025.
2024
Xiong Y, Li S, Wang R, Cheng Z, Yang J, Li D, Liu X, Xu D. Ultralow Contact Thermal Resistance between Bismuth Selenide Nanoribbons Achieved by Current-Induced Annealing. ACS Applied Materials & Interfaces. 2024;16(42):57824-57831.
Cheng Z, Huang Z, Sun J, Wang J, Feng T, Ohnishi K, Liang J, Amano H, HUANG R. (Ultra) wide bandgap semiconductor heterostructures for electronics cooling. Applied Physics Reviews. 2024;11(4).
Ji X, Huang Z, Ohno Y, Inoue K, Nagai Y, Sakaida Y, Uratani H, Sun J, Shigekawa N, Liang J, et al. Interfacial reaction boosts thermal conductance of room‐temperature integrated semiconductor interfaces stable up to 1100° C. Advanced Electronic Materials. 2024:2400387.
Masten HN, Lundh JS, Feygelson TI, Sasaki K, Cheng Z, Spencer JA, Liao P-Y, Hite JK, Pennachio DJ, Jacobs AG. Reduced temperature in lateral (AlxGa1− x) 2O3/Ga2O3 heterojunction field effect transistor capped with nanocrystalline diamond. Applied Physics Letters. 2024;124(15).
Li R, Hussain K, Liao ME, Huynh K, Bin Hoque MS, Wyant S, Koh YR, Xu Z, Wang Y, Luccioni DP. Enhanced Thermal Boundary Conductance across GaN/SiC Interfaces with AlN Transition Layers. ACS Applied Materials & Interfaces. 2024.
Cheng Z, Huang Y-J, Zahiri B, Kwon P, Braun PV, Cahill DG. Ionic Peltier effect in Li-ion electrolytes. Physical Chemistry Chemical Physics. 2024.
Sun J, Cheng Z, Liang J, Shigekawa N, Kawamura K, Uratani H, Sakaida Y, Cahill DG. Probe beam deflection technique with liquid immersion for fast mapping of thermal conductance. Applied Physics Letters. 2024;124(4).
2023
Hobart KD, Feygelson TI, Tadjer MJ, Anderson TJ, Koehler AD, Graham Jr S, Goorsky M, Cheng Z, Yates L, Bai T. Diamond on nanopatterned substrate. 2023.
Liao ME, Huynh K, Cheng Z, Shi J, Graham S, Goorsky MS. Thermal transport and structural improvements due to annealing of wafer bonded β-Ga2O3| 4H-SiC. Journal of Vacuum Science & Technology A. 2023;41(6).

Pages