Cheng Z. (Invited, Digital Presentation) Thermal Conductance across Heterogeneously Integrated Interfaces for Thermal Management of Wide and Ultra-Wide Bandgap Electronics. Electrochemical Society Meeting Abstracts 241. 2022;(31):1318-1318.

Cheng Z, Shi J, Graham S. Fundamental understanding of thermal transport across solid interfaces. In: Thermal Management of Gallium Nitride Electronics. Elsevier; 2022. pp. 69-82.

Cheng Z, Zahiri B, Kwon P, Braun PV, Cahill DG. Ionic Peltier Effect in Li Ion Battery Electrolytes. arXiv preprint arXiv:2211.14949. 2022.

Liang* J, Nagai H, Cheng* Z, Kawamura K, Shimizu Y, Ohno Y, Sakaida Y, Uratani H, Yoshida H, Nagai Y. Selective Direct Bonding of High Thermal Conductivity 3C-SiC Film to β-Ga2O3 for Top-Side Heat Extraction. arXiv preprint arXiv:2209.05669. 2022.

Lundh JS, Masten HN, Sasaki K, Jacobs AG, Cheng Z, Spencer J, Chen L, Gallagher J, Koehler AD, Konishi K. AlN-capped β-(AlxGal-x)2O3/Ga2O3 heterostructure field-effect transistors for near-junction thermal management of next generation power devices. 2022 Device Research Conference (DRC). 2022:1-2.

Cheng Z, Liang J, Kawamura K, Zhou H, Asamura H, Uratani H, Tiwari J, Graham S, Ohno Y, Nagai Y. High thermal conductivity in wafer-scale cubic silicon carbide crystals. Nature Communications. 2022;13(1):7201.

Cheng* Z, Ji X, Cahill DG. Battery absorbs heat during charging uncovered by ultra-sensitive thermometry. Journal of Power Sources. 2022;518:230762.

Cheng* Z, Graham S, Amano H, Cahill DG. Perspective on thermal conductance across heterogeneously integrated interfaces for wide and ultrawide bandgap electronics. Applied Physics Letters. 2022;120(3):030501.

Green AJ, Speck J, Xing G, Moens P, Allerstam F, Gumaelius K, Neyer T, Arias-Purdue A, Mehrotra V, Kuramata A. Roadmap – β-Gallium oxide power electronics. APL Materials. 2022;10(2):029201.

Cheng* Z, Graham S. Room-temperature bonded thermally conductive semiconductor interfaces. In: Thermal Management of Gallium Nitride Electronics. Woodhead Publishing; 2022. pp. 359-377.