Citation:
Masten HN, Lundh JS, Feygelson TI, Sasaki K, Cheng Z, Spencer JA, Liao P-Y, Hite JK, Pennachio DJ, Jacobs AG. Reduced temperature in lateral (AlxGa1− x) 2O3/Ga2O3 heterojunction field effect transistor capped with nanocrystalline diamond. Applied Physics Letters. 2024;124(15).