<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Masten, Hannah N</style></author><author><style face="normal" font="default" size="100%">Lundh, James Spencer</style></author><author><style face="normal" font="default" size="100%">Feygelson, Tatyana I</style></author><author><style face="normal" font="default" size="100%">Sasaki, Kohei</style></author><author><style face="normal" font="default" size="100%">Cheng, Zhe</style></author><author><style face="normal" font="default" size="100%">Spencer, Joseph A</style></author><author><style face="normal" font="default" size="100%">Liao, Pai-Ying</style></author><author><style face="normal" font="default" size="100%">Hite, Jennifer K</style></author><author><style face="normal" font="default" size="100%">Pennachio, Daniel J</style></author><author><style face="normal" font="default" size="100%">Jacobs, Alan G</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Reduced temperature in lateral (AlxGa1− x) 2O3/Ga2O3 heterojunction field effect transistor capped with nanocrystalline diamond</style></title><secondary-title><style face="normal" font="default" size="100%">Applied Physics Letters</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2024</style></year></dates><publisher><style face="normal" font="default" size="100%">AIP Publishing</style></publisher><volume><style face="normal" font="default" size="100%">124</style></volume><isbn><style face="normal" font="default" size="100%">0003-6951</style></isbn><language><style face="normal" font="default" size="100%">eng</style></language><issue><style face="normal" font="default" size="100%">15</style></issue></record></records></xml>