Citation:
Tang K, Palumbo FR, Zhang L, Droopad R, McIntyre PC. Interface Defect Hydrogen Depassivation and Capacitance–Voltage Hysteresis of Al2O3/InGaAs Gate Stacks. ACS Applied Materials and Interfaces [Internet]. 2017;9:7819-7825.
唐克超（Kechao Tang）
北京大学集成电路学院，助理教授，研究员/ Assistant Professor
School of Integrated circuits, Peking University
tkch@pku.edu.cn
(email)
