<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Tang, Kechao</style></author><author><style face="normal" font="default" size="100%">Palumbo, Felix Roberto</style></author><author><style face="normal" font="default" size="100%">Zhang, Liangliang</style></author><author><style face="normal" font="default" size="100%">Ravi Droopad</style></author><author><style face="normal" font="default" size="100%">Paul C. McIntyre</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Interface Defect Hydrogen Depassivation and Capacitance–Voltage Hysteresis of Al&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;3&lt;/sub&gt;/InGaAs Gate Stacks</style></title><secondary-title><style face="normal" font="default" size="100%">ACS Applied Materials and Interfaces</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2017</style></year><pub-dates><date><style  face="normal" font="default" size="100%">2017/03/01</style></date></pub-dates></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://pubs.acs.org/doi/abs/10.1021/acsami.6b16232</style></url></web-urls></urls><number><style face="normal" font="default" size="100%">8</style></number><publisher><style face="normal" font="default" size="100%">American Chemical Society</style></publisher><volume><style face="normal" font="default" size="100%">9</style></volume><pages><style face="normal" font="default" size="100%">7819-7825</style></pages><isbn><style face="normal" font="default" size="100%">1944-8244</style></isbn><language><style face="normal" font="default" size="100%">eng</style></language></record></records></xml>