@article {26648,
	title = {Interface Defect Hydrogen Depassivation and Capacitance{\textendash}Voltage Hysteresis of Al2O3/InGaAs Gate Stacks},
	journal = {ACS Applied Materials and Interfaces},
	volume = {9},
	number = {8},
	year = {2017},
	month = {2017/03/01},
	pages = {7819-7825},
	publisher = {American Chemical Society},
	isbn = {1944-8244},
	url = {https://pubs.acs.org/doi/abs/10.1021/acsami.6b16232},
	author = {Tang, Kechao and Palumbo, Felix Roberto and Zhang, Liangliang and Ravi Droopad and Paul C. McIntyre}
}
