Citation:
Tang K, Winter R, Zhang L, Droopad R, Eizenberg M, McIntyre PC. Border trap reduction in Al2O3/InGaAs gate stacks. Applied Physics Letters [Internet]. 2015;107:202102.
唐克超（Kechao Tang）
北京大学集成电路学院，助理教授，研究员/ Assistant Professor
School of Integrated circuits, Peking University
tkch@pku.edu.cn
(email)
