@article {26652,
	title = {Border trap reduction in Al2O3/InGaAs gate stacks},
	journal = {Applied Physics Letters},
	volume = {107},
	number = {20},
	year = {2015},
	pages = {202102},
	keywords = {\&quot;alumina, annealing, atomic layer deposition, Desorption, gallium arsenide, III-V semiconductors, indium compounds, thin films\&quot;},
	url = {https://aip.scitation.org/doi/abs/10.1063/1.4936100},
	author = {Tang, Kechao and Roy Winter and Zhang, Liangliang and Ravi Droopad and Moshe Eizenberg and Paul C. McIntyre}
}
