First-Principles Study of N2 or H2/N2 Plasma Pretreatment: Effects on the Interface Properties in Si3N4/AlN/GaN MIS-HEMTs

Citation:

Yang J, Tao M, Xiao J, Tang K, Chen Y, Zhang W, Zhang B, Huang B, Liu J, Wang H, et al. First-Principles Study of N2 or H2/N2 Plasma Pretreatment: Effects on the Interface Properties in Si3N4/AlN/GaN MIS-HEMTs. IEEE Transactions on Electron Devices. 2026;73:2994-3003.