First-Principles Study of N2 or H2/N2 Plasma Pretreatment: Effects on the Interface Properties in Si3N4/AlN/GaN MIS-HEMTs - Yang, Jiaofen; Ming Tao; Xiao, Jing; Kai Tang; Chen, Yilan; Wenjing Zhang; Bin Zhang; Huang, Bowen; Jie Liu; Wang, Hongyue; Wang, Jinyan; Wang, Maojun (IEEE Transactions on Electron Devices, 2026)
Keywords: Al-polar-AlN/GaN interface; Al2O3/GaN interface; Broadcasting; Circuits; Contacts; dangling bonds (DBs); Diodes; first-principles calculations; Integrated circuits; Light emitting diodes; Monolithic integrated circuits; Motion pictures; N-polar-AlN/GaN interface; plasma pretreatment (PP); Satellite broadcasting