摘要:

We fabricated self-aligned quasi-vertical trench p-NiO/GaN merged p-n Schottky diodes with p-NiO guard-rings and investigated the effects of trench depth (dt) and n-region width (Wn) on the electrical characteristics. The MPS diode with Wn of 2 μm and dt of 1 μm exhibited a high forward current density of 1 kA cm−2 and a low differential Ron,sp of 1.4 mΩ·cm2. Guard-rings edge termination was introduced to improve the breakdown voltage from 330 V to 430 V. The average breakdown electric field was calculated to be 1.1 MV cm−1 for the MPS diode on a sapphire substrate.

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