@article {Wang_2026,
	title = {Self-aligned quasi-vertical trench p-NiO/GaN merged p-n Schottky diodes with p-NiO guard-rings},
	journal = {Japanese Journal of Applied Physics},
	volume = {65},
	number = {12},
	year = {2026},
	month = {jun},
	pages = {120902},
	publisher = {IOP Publishing},
	abstract = {We fabricated self-aligned quasi-vertical trench p-NiO/GaN merged p-n Schottky diodes with p-NiO guard-rings and investigated the effects of trench depth (dt) and n-region width (Wn) on the electrical characteristics. The MPS diode with Wn of 2 μm and dt of 1 μm exhibited a high forward current density of 1 kA cm-2 and a low differential Ron,sp of 1.4 mΩ{\textperiodcentered}cm2. Guard-rings edge termination was introduced to improve the breakdown voltage from 330 V to 430 V. The average breakdown electric field was calculated to be 1.1 MV cm-1 for the MPS diode on a sapphire substrate.},
	doi = {10.35848/1347-4065/ae769e},
	url = {https://doi.org/10.35848/1347-4065/ae769e},
	author = {Wang, Pengfei and Wang, Maojun and Wang, Jinbing and Liu, Sihang and Wei, Jin and Wang, Jinyan and Sun, Na and Ye, Jiandong and Zhang, Xun and Feng, Yuxia and Shen, Bo}
}
