@article {11481509,
	title = {First-Principles Study of N2 or H2/N2 Plasma Pretreatment: Effects on the Interface Properties in Si3N4/AlN/GaN MIS-HEMTs},
	journal = {IEEE Transactions on Electron Devices},
	volume = {73},
	number = {5},
	year = {2026},
	pages = {2994-3003},
	keywords = {Al-polar-AlN/GaN interface, Al2O3/GaN interface, Broadcasting, Circuits, Contacts, dangling bonds (DBs), Diodes, first-principles calculations, Integrated circuits, Light emitting diodes, Monolithic integrated circuits, Motion pictures, N-polar-AlN/GaN interface, plasma pretreatment (PP), Satellite broadcasting},
	doi = {10.1109/TED.2026.3678928},
	author = {Yang, Jiaofen and Ming Tao and Xiao, Jing and Kai Tang and Chen, Yilan and Wenjing Zhang and Bin Zhang and Huang, Bowen and Jie Liu and Wang, Hongyue and Wang, Jinyan and Wang, Maojun}
}
