Citation:
Tang K, Meng AC, Droopad R, McIntyre PC. Temperature Dependent Border Trap Response Produced by a Defective Interfacial Oxide Layer in Al2O3/InGaAs Gate Stacks. ACS Applied Materials and Interfaces [Internet]. 2016;8:30601-30607.
唐克超（Kechao Tang）
北京大学集成电路学院，助理教授，研究员/ Assistant Professor
School of Integrated circuits, Peking University
tkch@pku.edu.cn
(email)
