Citation:
Zhou Y, Liang Z, Zhu R, Huang Q, Tang K, HUANG R. HAO+Al2O3 FeFET Gate-Stack for Overall Improvement in Operating Voltage, Endurance, and Retention. IEEE Transactions on Electron Devices. 2024:1-7.
唐克超（Kechao Tang）
北京大学集成电路学院，助理教授，研究员/ Assistant Professor
School of Integrated circuits, Peking University
tkch@pku.edu.cn
(email)
