@article {10679711,
	title = {HAO+Al2O3 FeFET Gate-Stack for Overall Improvement in Operating Voltage, Endurance, and Retention},
	journal = {IEEE Transactions on Electron Devices},
	year = {2024},
	pages = {1-7},
	keywords = {Capacitors, Endurance, FeFETs, ferroelectric field-effect transistor (FeFET), Hafnium oxide, interface charge trapping, iron, Logic gates, operating voltage, Retention, Silicon, Voltage},
	doi = {10.1109/TED.2024.3453228},
	author = {Zhou, Yuejia and Liang, Zhongxin and Zhu, Runteng and Huang, Qianqian and Tang, Kechao and Ru HUANG}
}
