Citation:
Tang K, Droopad R, McIntyre PC. Bias temperature stress induced hydrogen depassivation from Al2O3/InGaAs interface defects. Journal of Applied Physics [Internet]. 2018;123:025708.
唐克超（Kechao Tang）
北京大学集成电路学院，助理教授，研究员/ Assistant Professor
School of Integrated circuits, Peking University
tkch@pku.edu.cn
(email)
