@article {26645,
	title = {Bias temperature stress induced hydrogen depassivation from Al2O3/InGaAs interface defects},
	journal = {Journal of Applied Physics},
	volume = {123},
	number = {2},
	year = {2018},
	pages = {025708},
	keywords = {\&quot, alumina, annealing, gallium arsenide, III-V semiconductors, indium compounds, interface states, isotope effects, MIS structures, passivation, thermal stresses\&quot},
	url = {https://aip.scitation.org/doi/abs/10.1063/1.4994393},
	author = {Tang, Kechao and Ravi Droopad and Paul C. McIntyre}
}
