Citation:
Lundh JS, Masten HN, Sasaki K, Jacobs AG, Cheng Z, Spencer J, Chen L, Gallagher J, Koehler AD, Konishi K. AlN-capped β-(AlxGal-x)2O3/Ga2O3 heterostructure field-effect transistors for near-junction thermal management of next generation power devices. 2022 Device Research Conference (DRC). 2022:1-2.