AlN-capped β-(AlxGal-x)2O3/Ga2O3 heterostructure field-effect transistors for near-junction thermal management of next generation power devices - Lundh, James Spencer; Masten, Hannah N; Sasaki, Kohei; Jacobs, Alan G; Cheng, Zhe; Spencer, Joseph; Lei Chen; Gallagher, James; Koehler, Andrew D; Konishi, Keita (2022 Device Research Conference (DRC), 2022)