@proceedings {33015,
	title = {AlN-capped β-(AlxGal-x)2O3/Ga2O3 heterostructure field-effect transistors for near-junction thermal management of next generation power devices},
	journal = {2022 Device Research Conference (DRC)},
	year = {2022},
	pages = {1-2},
	publisher = {IEEE},
	author = {Lundh, James Spencer and Masten, Hannah N and Sasaki, Kohei and Jacobs, Alan G and Cheng, Zhe and Spencer, Joseph and Lei Chen and Gallagher, James and Koehler, Andrew D and Konishi, Keita}
}
