科研成果

2010

Wrachien N, Cester A, Zanoni E, Meneghesso G, Wu YQ, Ye PD, Ieee. Degradation of III-V inversion-type enhancement-mode MOSFETs. 2010 International Reliability Physics Symposium [Internet]. 2010:536-542. 访问链接 SCI被引用次数：10.

Wu YQ, Lin YM, Jenkins KA, Ott JA, Dimitrakopoulos C, Farmer DB, Xia F, Grill A, Antoniadis DA, Avouris P, et al. RF Performance of Short Channel Graphene Field-Effect Transistor. In: 2010 International Electron Devices Meeting - Technical Digest. ; 2010. 访问链接

Wu YQ, Gu JJ, Ye PD, Ieee. Scaling of InGaAs MOSFETs into deep-submicron regime. In: 2010 22nd International Conference on Indium Phosphide and Related Materials. ; 2010. 访问链接

Lin Y-M, Dimitrakopoulos C, Farmer DB, Han S-J, Wu Y, Zhu W, Gaskill KD, Tedesco JL, Myers-Ward RL, Eddy, Charles R. J, et al. Multicarrier transport in epitaxial multilayer graphene. Applied Physics Letters [Internet]. 2010;97. 访问链接 SCI被引用次数：41.

Dong L, Liu YQ, Xu M, Wu YQ, Colby R, Stach EA, Droopad R, Gordon RG, Ye PD, Ieee. Atomic-layer-deposited LaAlO3/SrTiO3 all oxide field-effect transistors.; 2010. 访问链接

2009

Ye PD, Xuan Y, Wu YQ, Xu M. Inversion-mode InxGa1-xAs MOSFETs (x=0.53,0.65,0.75) with atomic-layer-deposited high-k dielectrics. In: Sah RE, Deen JM, Toriumi A, Zhang J, Yota J Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 10. Vol. 19. ; 2009. pp. 605-+. 访问链接

Xu M, Wu YQ, Ye PD. Fermi-level unpinning on GaAs (111)A surface with direct ALD Al2O3.; 2009 pp. 111-12. 访问链接

Xu M, Wu YQ, Koybasi O, Shen T, Ye PD. Metal-oxide-semiconductor field-effect transistors on GaAs (111)A surface with atomic-layer-deposited Al2O3 as gate dielectrics. Applied Physics Letters [Internet]. 2009;94. 访问链接 SCI被引用次数：44.

Xu M, Xu K, Contreras R, Milojevic M, Shen T, Koybasi O, Wu YQ, Wallace RM, Ye PD, Ieee. New Insight into Fermi-Level Unpinning on GaAs: Impact of Different Surface Orientations.; 2009 pp. 809-+. 访问链接

Wu YQ, Xu M, Wang RS, Koybasi O, Ye PD, Ieee. High Performance Deep-Submicron Inversion-Mode InGaAs MOSFETs with maximum G(m) exceeding 1.1 mS/mu m: New HBr Pretreatment and Channel Engineering.; 2009 pp. 296-299. 访问链接

Wu YQ, Wang WK, Koybasi O, Zakharov DN, Stach EA, Nakahara S, Hwang JCM, Ye PD. 0.8-V Supply Voltage Deep-Submicrometer Inversion-Mode In0.75Ga0.25As MOSFET. Ieee Electron Device Letters [Internet]. 2009;30:700-702. 访问链接 SCI被引用次数：71.

Wu YQ, Wang RS, Shen T, Gu JJ, Ye PD, Ieee. First Experimental Demonstration of 100 nm Inversion-mode In GaAs FinFET through Damage-free Sidewall Etching.; 2009 pp. 304-+. 访问链接

Shen T, Gu JJ, Xu M, Wu YQ, Bolen ML, Capano MA, Engel LW, Ye PD. Observation of quantum-Hall effect in gated epitaxial graphene grown on SiC (0001). Applied Physics Letters [Internet]. 2009;95. 访问链接 SCI被引用次数：94.

2008

Ye PD, Xuan Y, Wu YQ, Shen T, Pal H, Varghese D, Alam MA, Lundstrom MS, Wang WK, Hwang JCM, et al. Subthreshold characteristics of high-performance inversion-type enhancement-mode InGaAs NMOSFETs with ALD Al2O3 as gate dielectric.; 2008 pp. 93-4. 访问链接

Xuan Y, Wu YQ, Shen T, Qi M, Capano MA, Cooper JA, Ye PD. Atomic-layer-deposited nanostructures for graphene-based nanoelectronics. Applied Physics Letters [Internet]. 2008;92. 访问链接 SCI被引用次数：193.

Xuan Y, Wu YQ, Ye PD. High-performance inversion-type enhancement-mode InGaAs MOSFET with maximum drain current exceeding 1 A/mm. Ieee Electron Device Letters [Internet]. 2008;29:294-296. 访问链接 SCI被引用次数：268.

Xuan Y, Shen T, Xu A, Wu YQ, Ye PD, Ieee. High-performance Surface Channel In-rich In0.75Ga0.25As MOSFETs with ALD High-k as Gate Dielectric. In: Ieee International Electron Devices Meeting 2008, Technical Digest. ; 2008. pp. 371-+. 访问链接

Xuan Y, Shen T, Xu M, Wu YQ, Ye PD. High-performance surface channel In-rich In0.75Ga0.25As MOSFETs with ALD high-k as gate dielectric.; 2008 pp. 4 pp.-4 pp. 访问链接

Xuan Y, Shen T, Wu YQ, Xu M, Ye PD. High-performance inversion-type E-mode In0.65Ga0.35As MOSFETs with ALD HfO2 as gate dielectric.; 2008 pp. 37-8. 访问链接

Wu YQ, Xu M, Ye PD, Cheng Z, Li J, Park JS, Hydrick J, Bai J, Carroll M, Fiorenza JG, et al. Atomic-layer-deposited Al2O3/GaAs metal-oxide-semiconductor field-effect transistor on Si substrate using aspect ratio trapping technique. Applied Physics Letters [Internet]. 2008;93. 访问链接 SCI被引用次数：47.

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最新科研成果

已提交.

Hu QL, .. et al. WUY. True Nonvolatile High-Speed DRAM Cells Using Tailored Ultrathin IGZO. Advanced Materials [Internet]. 2023;35(20):2210554. 访问链接

Shi X, Li X, Guo Q, Zeng M, Wang X, Wu Y. Ultrashort channel chemical vapor deposited bilayer WS2 field-effect transistors. Applied Physics Reviews. 2023;10:011405.

Shi X, Wang X, Liu S, Guo Q, Sun L, Li X, HUANG R, Wu Y. High-Performance Bilayer WSe 2 pFET with Record I ds= 425 $μ$A/$μ$m and G m= 100 at $μ$S/$μ$m V ds=-1 V By Direct Growth and Fabrication on SiO 2 Substrate, in 2022 International Electron Devices Meeting (IEDM). IEEE; 2022:7–1.

Fu T, Zeng M, Liu S, Liu H, HUANG R, Wu Y. Record-high 2P r= 60 $μ$C/cm 2 by Sub-5ns Switching Pulse in Ferroelectric Lanthanum-doped HfO 2 with Large Single Grain of Orthorhombic Phase> 38 nm, in 2022 International Electron Devices Meeting (IEDM). IEEE; 2022:6–5.

Hu Q, Li Q, Zhu S, Gu C, Liu S, HUANG R, Wu Y. Optimized IGZO FETs for Capacitorless DRAM with Retention of 10 ks at RT and 7 ks at 85° C at Zero V hold with Sub-10 ns Speed and 3-bit Operation, in 2022 International Electron Devices Meeting (IEDM). IEEE; 2022:26–6.

Li Q, Gu C, Zhu S, Hu Q, Zhao W, Li X, HUANG R, Wu Y. {BEOL-Compatible High-Performance a-IGZO Transistors with Record high I ds, in 2022 International Electron Devices Meeting (IEDM). IEEE; 2022:2–7.

Xiong X, Liu S, Liu H, Chen Y, Shi X, Wang X, Li X, HUANG R, Wu Y. Top-Gate CVD WSe 2 pFETs with Record-High I d\~ 594 $μ$A/$μ$m, G m\~ 244 $μ$S/$μ$m and WSe 2/MoS 2 CFET based Half-adder Circuit Using Monolithic 3D Integration, in 2022 International Electron Devices Meeting (IEDM). IEEE; 2022:20–6.

Shi X, Li X, Guo Q, Gao H, Zeng M, Han Y, Yan S, Wu Y. Improved Self-Heating in Short-Channel Monolayer WS2 Transistors with High-Thermal Conductivity BeO Dielectrics. Nano Letters. 2022;22:7667–7673.

Li X, Zhang Z, Gao T, Shi X, Gu C, Wu Y. Van der Waals Epitaxial Trilayer MoS2 Crystals for High-Speed Electronics. Advanced Functional Materials. 2022;32:2208091.

Hu Q, Gu C, Zhu S, Li Q, Tong A, Kang J, HUANG R, Wu Y. Capacitorless DRAM Cells Based on High-Performance Indium-Tin-Oxide Transistors With Record Data Retention and Reduced Write Latency. IEEE Electron Device Letters. 2022;44:60–63.

Hu Q, Zhu S, Gu C, Wu Y. High-stability flexible radio frequency transistor and mixer based on ultrathin indium tin oxide channel. Applied Physics Letters. 2022;121:242101.

Hu Q, Zhu S, Gu C, Liu S, Zeng M, Wu Y. Ultrashort 15-nm flexible radio frequency ITO transistors enduring mechanical and temperature stress. Science Advances. 2022;8:eade4075.

Xiong X, Kang J, Liu S, Tong A, Fu T, Li X, HUANG R, Wu Y. Nonvolatile logic and ternary content-addressable memory based on complementary black phosphorus and rhenium disulfide Transistors. Advanced Materials. 2022;34:2106321.

Xiong X, Wang X, Hu Q, Li X, Wu Y. Flexible synaptic floating gate devices with dual electrical modulation based on ambipolar black phosphorus. Iscience. 2022;25:103947.

Cai P, Li H, Liu Z, Zhu T, Zeng M, JI Z, Wu Y, Padovani A, Larcher L, Pešić M, et al. Investigation of Coercive Field Shift During Cycling in HfZrOₓ Ferroelectric Capacitors. IEEE Transactions on Electron Devices. 2022;69:2384–2390.

Cheng Z, Pang C-S, Wang P, Le ST, Wu Y, Shahrjerdi D, Radu I, Lemme MC, Peng L-M, Duan X, et al. How to report and benchmark emerging field-effect transistors. Nature Electronics. 2022;5:416–423.

Gao T, Li X, Han L, Wu Y. Tunable synaptic devices based on ambipolar MoTe2 transistor, in 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM). IEEE; 2021:1–3.

Wang X, Shi X, Gu C, Guo Q, Liu H, Li X, Wu Y. High-performance n-type transistors based on CVD-grown large-domain trilayer WSe2. APL Materials. 2021;9:071109.

Xiong X, Tong A, Wang X, Liu S, Li X, HUANG R, Wu Y. Demonstration of Vertically-stacked CVD Monolayer Channels: MoS 2 Nanosheets GAA-FET with I on> 700 $μ$A/$μ$m and MoS2/WSe2 CFET, in 2021 IEEE International Electron Devices Meeting (IEDM). IEEE; 2021:7–5.

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