Atomic-layer-deposited Al2O3/GaAs metal-oxide-semiconductor field-effect transistor on Si substrate using aspect ratio trapping technique

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Wu YQ, Xu M, Ye PD, Cheng Z, Li J, Park JS, Hydrick J, Bai J, Carroll M, Fiorenza JG, et al. Atomic-layer-deposited Al2O3/GaAs metal-oxide-semiconductor field-effect transistor on Si substrate using aspect ratio trapping technique. Applied Physics Letters [Internet]. 2008;93.

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