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科研成果 by Type: Conference Paper

2022
Shi X, Wang X, Liu S, Guo Q, Sun L, Li X, HUANG R, Wu Y. High-Performance Bilayer WSe 2 pFET with Record I ds= 425 $μ$A/$μ$m and G m= 100 at $μ$S/$μ$m V ds=-1 V By Direct Growth and Fabrication on SiO 2 Substrate, in 2022 International Electron Devices Meeting (IEDM). IEEE; 2022:7–1.
Fu T, Zeng M, Liu S, Liu H, HUANG R, Wu Y. Record-high 2P r= 60 $μ$C/cm 2 by Sub-5ns Switching Pulse in Ferroelectric Lanthanum-doped HfO 2 with Large Single Grain of Orthorhombic Phase> 38 nm, in 2022 International Electron Devices Meeting (IEDM). IEEE; 2022:6–5.
Hu Q, Li Q, Zhu S, Gu C, Liu S, HUANG R, Wu Y. Optimized IGZO FETs for Capacitorless DRAM with Retention of 10 ks at RT and 7 ks at 85° C at Zero V hold with Sub-10 ns Speed and 3-bit Operation, in 2022 International Electron Devices Meeting (IEDM). IEEE; 2022:26–6.
Li Q, Gu C, Zhu S, Hu Q, Zhao W, Li X, HUANG R, Wu Y. {BEOL-Compatible High-Performance a-IGZO Transistors with Record high I ds, in 2022 International Electron Devices Meeting (IEDM). IEEE; 2022:2–7.
Xiong X, Liu S, Liu H, Chen Y, Shi X, Wang X, Li X, HUANG R, Wu Y. Top-Gate CVD WSe 2 pFETs with Record-High I d\~ 594 $μ$A/$μ$m, G m\~ 244 $μ$S/$μ$m and WSe 2/MoS 2 CFET based Half-adder Circuit Using Monolithic 3D Integration, in 2022 International Electron Devices Meeting (IEDM). IEEE; 2022:20–6.
2021
Gao T, Li X, Han L, Wu Y. Tunable synaptic devices based on ambipolar MoTe2 transistor, in 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM). IEEE; 2021:1–3.
Xiong X, Tong A, Wang X, Liu S, Li X, HUANG R, Wu Y. Demonstration of Vertically-stacked CVD Monolayer Channels: MoS 2 Nanosheets GAA-FET with I on> 700 $μ$A/$μ$m and MoS2/WSe2 CFET, in 2021 IEEE International Electron Devices Meeting (IEDM). IEEE; 2021:7–5.
2020
Gao Q, Zhang C, Zhang Z, Yi Z, Pan X, Chi F, Liu L, Li X, Wu Y. High-Frequency Performance of MoS 2 Transistors at Cryogenic Temperatures, in 2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT). IEEE; 2020:1–3.
Hu Q, Wu Y. Light-stimulated artificial synapse based on Schottky barrier modulated CVD Mos2 transistors, in 2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT). IEEE; 2020:1–3.
Li S, Gu C, Li X, HUANG R, Wu Y. 10-nm Channel Length Indium-Tin-Oxide transistors with I on= 1860 $μ$A/$μ$m, G m= 1050 $μ$S/$μ$m at V ds= 1 V with BEOL Compatibility, in 2020 IEEE International Electron Devices Meeting (IEDM). IEEE; 2020:40–5.
2019
Li S, Tian M, Gu C, WANG R, Wang M, Xiong X, Li X, HUANG R, Wu Y. BEOL compatible 15-nm channel length ultrathin indium-tin-oxide transistors with I on= 970 $μ$A/$μ$m and on/off ratio near 10 11 at V ds= 0.5 V, in 2019 IEEE International Electron Devices Meeting (IEDM). IEEE; 2019:3–5.
Wang M, Tian M, Zhang Z, Li S, WANG R, Gu C, Shan X, Xiong X, Li X, HUANG R, et al. High performance gigahertz flexible radio frequency transistors with extreme bending conditions, in 2019 IEEE International Electron Devices Meeting (IEDM). IEEE; 2019:8–2.
Hu Q, Zhang Z, Wu Y. High performance optoelectronics based on CVD Mos2, in 2019 IEEE 13th International Conference on ASIC (ASICON). IEEE; 2019:1–3.