High performance gigahertz flexible radio frequency transistors with extreme bending conditions

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Wang M, Tian M, Zhang Z, Li S, WANG R, Gu C, Shan X, Xiong X, Li X, HUANG R, et al. High performance gigahertz flexible radio frequency transistors with extreme bending conditions, in 2019 IEEE International Electron Devices Meeting (IEDM). IEEE; 2019:8–2.

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Hu QL, .. et al. WUY. True Nonvolatile High-Speed DRAM Cells Using Tailored Ultrathin IGZO. Advanced Materials [Internet]. 2023;35(20):2210554. 访问链接

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