科研成果 by Year: 2018

2018

Zemlyanov D, Luo W, Milligan C, Du Y, Yang L, Wu Y, Ye P. Oxidative environment derived surface study on black phosphorus. Abstracts of Papers of the American Chemical Society [Internet]. 2018;256. 访问链接

Zhang Z, Xu X, Song J, Gao Q, Li S, Hu Q, Li X, Wu Y. High-performance transistors based on monolayer CVD MoS2 grown on molten glass. Applied Physics Letters [Internet]. 2018;113. 访问链接

Xiong X, Li X, Huang M, Li T, Gao T, Wu Y. High Performance Black Phosphorus Electronic and Photonic Devices with HfLaO Dielectric. Ieee Electron Device Letters [Internet]. 2018;39:127-130. 访问链接

Tian M, Li X, Li T, Gao Q, Xiong X, Hu Q, Wang M, Wang X, Wu Y. High-Performance CVD Bernal-Stacked Bilayer Graphene Transistors for Amplifying and Mixing Signals at High Frequencies. Acs Applied Materials & Interfaces [Internet]. 2018;10:20219-20224. 访问链接

Tian M, Xiong X, Huang M, Li T, Li S, Hu Q, Li X, Wu Y. High-performance two-dimensional transistors and circuits.; 2018 pp. 565-568. 访问链接

Li X, Grassi R, Li S, Li T, Xiong X, Low T, Wu Y. Anomalous Temperature Dependence in Metal-Black Phosphorus Contact. Nano Letters [Internet]. 2018;18:26-31. 访问链接

Li X, Li T, Zhang Z, Xiong X, Li S, Wu Y. Tunable Low-Frequency Noise in Dual-Gate MoS2 Transistors. Ieee Electron Device Letters [Internet]. 2018;39:131-134. 访问链接

Li X, Xiong X, Li T, Gao T, Wu Y. Optimized Transport of Black Phosphorus Top Gate Transistors Using Alucone Dielectrics. Ieee Electron Device Letters [Internet]. 2018;39:1952-1955. 访问链接

Hu Q, Li S, Li T, Wang X, Li X, Wu Y. Channel Engineering of Normally-OFF AlGaN/GaN MOS-HEMTs by Atomic Layer Etching and High-kappa Dielectric. Ieee Electron Device Letters [Internet]. 2018;39:1377-1380. 访问链接

Li T, Tian M, Li S, Huang M, Xiong X, Hu Q, Li S, Li X, Wu Y. Black Phosphorus Radio Frequency Electronics at Cryogenic Temperatures. Advanced Electronic Materials [Internet]. 2018;4. 访问链接

Gao Q, Zhang Z, Xu X, Song J, Li X, Wu Y. Scalable high performance radio frequency electronics based on large domain bilayer MoS2. Nature Communications [Internet]. 2018;9. 访问链接

Gao T, Li X, Xiong X, Huang M, Li T, Wu Y. Optimized Transport Properties in Lithium Doped Black Phosphorus Transistors. Ieee Electron Device Letters [Internet]. 2018;39:769-772. 访问链接

成果类型

成果概览

已提交 (1)
2023 (2)
2022 (14)
2021 (6)
2020 (8)
2019 (12)
2018 (12)
2017 (8)
2016 (4)
2015 (4)

最新科研成果

已提交.

Hu QL, .. et al. WUY. True Nonvolatile High-Speed DRAM Cells Using Tailored Ultrathin IGZO. Advanced Materials [Internet]. 2023;35(20):2210554. 访问链接

Shi X, Li X, Guo Q, Zeng M, Wang X, Wu Y. Ultrashort channel chemical vapor deposited bilayer WS2 field-effect transistors. Applied Physics Reviews. 2023;10:011405.

Shi X, Wang X, Liu S, Guo Q, Sun L, Li X, HUANG R, Wu Y. High-Performance Bilayer WSe 2 pFET with Record I ds= 425 $μ$A/$μ$m and G m= 100 at $μ$S/$μ$m V ds=-1 V By Direct Growth and Fabrication on SiO 2 Substrate, in 2022 International Electron Devices Meeting (IEDM). IEEE; 2022:7–1.

Fu T, Zeng M, Liu S, Liu H, HUANG R, Wu Y. Record-high 2P r= 60 $μ$C/cm 2 by Sub-5ns Switching Pulse in Ferroelectric Lanthanum-doped HfO 2 with Large Single Grain of Orthorhombic Phase> 38 nm, in 2022 International Electron Devices Meeting (IEDM). IEEE; 2022:6–5.

Hu Q, Li Q, Zhu S, Gu C, Liu S, HUANG R, Wu Y. Optimized IGZO FETs for Capacitorless DRAM with Retention of 10 ks at RT and 7 ks at 85° C at Zero V hold with Sub-10 ns Speed and 3-bit Operation, in 2022 International Electron Devices Meeting (IEDM). IEEE; 2022:26–6.

Li Q, Gu C, Zhu S, Hu Q, Zhao W, Li X, HUANG R, Wu Y. {BEOL-Compatible High-Performance a-IGZO Transistors with Record high I ds, in 2022 International Electron Devices Meeting (IEDM). IEEE; 2022:2–7.

Xiong X, Liu S, Liu H, Chen Y, Shi X, Wang X, Li X, HUANG R, Wu Y. Top-Gate CVD WSe 2 pFETs with Record-High I d\~ 594 $μ$A/$μ$m, G m\~ 244 $μ$S/$μ$m and WSe 2/MoS 2 CFET based Half-adder Circuit Using Monolithic 3D Integration, in 2022 International Electron Devices Meeting (IEDM). IEEE; 2022:20–6.

Shi X, Li X, Guo Q, Gao H, Zeng M, Han Y, Yan S, Wu Y. Improved Self-Heating in Short-Channel Monolayer WS2 Transistors with High-Thermal Conductivity BeO Dielectrics. Nano Letters. 2022;22:7667–7673.

Li X, Zhang Z, Gao T, Shi X, Gu C, Wu Y. Van der Waals Epitaxial Trilayer MoS2 Crystals for High-Speed Electronics. Advanced Functional Materials. 2022;32:2208091.

Hu Q, Gu C, Zhu S, Li Q, Tong A, Kang J, HUANG R, Wu Y. Capacitorless DRAM Cells Based on High-Performance Indium-Tin-Oxide Transistors With Record Data Retention and Reduced Write Latency. IEEE Electron Device Letters. 2022;44:60–63.

Hu Q, Zhu S, Gu C, Wu Y. High-stability flexible radio frequency transistor and mixer based on ultrathin indium tin oxide channel. Applied Physics Letters. 2022;121:242101.

Hu Q, Zhu S, Gu C, Liu S, Zeng M, Wu Y. Ultrashort 15-nm flexible radio frequency ITO transistors enduring mechanical and temperature stress. Science Advances. 2022;8:eade4075.

Xiong X, Kang J, Liu S, Tong A, Fu T, Li X, HUANG R, Wu Y. Nonvolatile logic and ternary content-addressable memory based on complementary black phosphorus and rhenium disulfide Transistors. Advanced Materials. 2022;34:2106321.

Xiong X, Wang X, Hu Q, Li X, Wu Y. Flexible synaptic floating gate devices with dual electrical modulation based on ambipolar black phosphorus. Iscience. 2022;25:103947.

Cai P, Li H, Liu Z, Zhu T, Zeng M, JI Z, Wu Y, Padovani A, Larcher L, Pešić M, et al. Investigation of Coercive Field Shift During Cycling in HfZrOₓ Ferroelectric Capacitors. IEEE Transactions on Electron Devices. 2022;69:2384–2390.

Cheng Z, Pang C-S, Wang P, Le ST, Wu Y, Shahrjerdi D, Radu I, Lemme MC, Peng L-M, Duan X, et al. How to report and benchmark emerging field-effect transistors. Nature Electronics. 2022;5:416–423.

Gao T, Li X, Han L, Wu Y. Tunable synaptic devices based on ambipolar MoTe2 transistor, in 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM). IEEE; 2021:1–3.

Wang X, Shi X, Gu C, Guo Q, Liu H, Li X, Wu Y. High-performance n-type transistors based on CVD-grown large-domain trilayer WSe2. APL Materials. 2021;9:071109.

Xiong X, Tong A, Wang X, Liu S, Li X, HUANG R, Wu Y. Demonstration of Vertically-stacked CVD Monolayer Channels: MoS 2 Nanosheets GAA-FET with I on> 700 $μ$A/$μ$m and MoS2/WSe2 CFET, in 2021 IEEE International Electron Devices Meeting (IEDM). IEEE; 2021:7–5.

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