科研成果 by Year: 2019

2019

Li S, Tian M, Gu C, WANG R, Wang M, Xiong X, Li X, HUANG R, Wu Y. BEOL compatible 15-nm channel length ultrathin indium-tin-oxide transistors with I on= 970 $μ$A/$μ$m and on/off ratio near 10 11 at V ds= 0.5 V, in 2019 IEEE International Electron Devices Meeting (IEDM). IEEE; 2019:3–5.

Wang M, Tian M, Zhang Z, Li S, WANG R, Gu C, Shan X, Xiong X, Li X, HUANG R, et al. High performance gigahertz flexible radio frequency transistors with extreme bending conditions, in 2019 IEEE International Electron Devices Meeting (IEDM). IEEE; 2019:8–2.

Tian M, Hu B, Yang H, Tang C, Wang M, Gao Q, Xiong X, Zhang Z, Li T, Li X, et al. Wafer scale mapping and statistical analysis of radio frequency characteristics in highly uniform CVD graphene transistors. Advanced Electronic Materials. 2019;5:1800711.

Li X, Yu Z, Xiong X, Li T, Gao T, WANG R, HUANG R, Wu Y. High-speed black phosphorus field-effect transistors approaching ballistic limit. Science advances. 2019;5:eaau3194.

Li S, Tian M, Gao Q, Wang M, Li T, Hu Q, Li X, Wu Y. Nanometre-thin indium tin oxide for advanced high-performance electronics. Nature Materials. 2019;18:1091–1097.

Hu Q, Hu B, Gu C, Li T, Li S, Li S, Li X, Wu Y. Improved current collapse in recessed AlGaN/GaN MOS-HEMTs by interface and structure engineering. IEEE Transactions on Electron Devices. 2019;66:4591–4596.

Bao L, Zhu J, Yu Z, Jia R, Cai Q, Wang Z, Xu L, Wu Y, Yang Y, Cai Y, et al. Dual-gated MoS2 neuristor for neuromorphic computing. ACS applied materials & interfaces. 2019;11:41482–41489.

Hu Q, Zhang Z, Wu Y. High performance optoelectronics based on CVD Mos2, in 2019 IEEE 13th International Conference on ASIC (ASICON). IEEE; 2019:1–3.

Li S, Hu Q, Wang X, Li T, Li X, Wu Y. Improved Interface Properties and Dielectric Breakdown in Recessed AlGaN/GaN MOS-HEMTs Using HfSiOX as Gate Dielectric. Ieee Electron Device Letters [Internet]. 2019;40:295-298. 访问链接 SCI被引用次数：12.

Li T, Li X, Tian M, Hu Q, Wang X, Li S, Wu Y. Negative transconductance and negative differential resistance in asymmetric narrow bandgap 2D-3D heterostructures. Nanoscale [Internet]. 2019;11:4701-4706. 访问链接 SCI被引用次数：7.

Tian M, Li X, Gao Q, Xiong X, Zhang Z, Wu Y. Improvement of Conversion Loss of Resistive Mixers Using Bernal-Stacked Bilayer Graphene. IEEE Electron Device Letters. 2019;40:325-328. SCI被引用次数：5.

Wang M, Li X, Xiong X, Song J, Gu C, Zhan D, Hu Q, Li S, Wu Y. High-Performance Flexible ZnO Thin-Film Transistors by Atomic Layer Deposition. IEEE Electron Device Letters. 2019;40:419-422. SCI被引用次数：20.

成果类型

成果概览

已提交 (1)
2023 (2)
2022 (14)
2021 (6)
2020 (8)
2019 (12)
2018 (12)
2017 (8)
2016 (4)
2015 (4)

最新科研成果

已提交.

Hu QL, .. et al. WUY. True Nonvolatile High-Speed DRAM Cells Using Tailored Ultrathin IGZO. Advanced Materials [Internet]. 2023;35(20):2210554. 访问链接

Shi X, Li X, Guo Q, Zeng M, Wang X, Wu Y. Ultrashort channel chemical vapor deposited bilayer WS2 field-effect transistors. Applied Physics Reviews. 2023;10:011405.

Shi X, Wang X, Liu S, Guo Q, Sun L, Li X, HUANG R, Wu Y. High-Performance Bilayer WSe 2 pFET with Record I ds= 425 $μ$A/$μ$m and G m= 100 at $μ$S/$μ$m V ds=-1 V By Direct Growth and Fabrication on SiO 2 Substrate, in 2022 International Electron Devices Meeting (IEDM). IEEE; 2022:7–1.

Fu T, Zeng M, Liu S, Liu H, HUANG R, Wu Y. Record-high 2P r= 60 $μ$C/cm 2 by Sub-5ns Switching Pulse in Ferroelectric Lanthanum-doped HfO 2 with Large Single Grain of Orthorhombic Phase> 38 nm, in 2022 International Electron Devices Meeting (IEDM). IEEE; 2022:6–5.

Hu Q, Li Q, Zhu S, Gu C, Liu S, HUANG R, Wu Y. Optimized IGZO FETs for Capacitorless DRAM with Retention of 10 ks at RT and 7 ks at 85° C at Zero V hold with Sub-10 ns Speed and 3-bit Operation, in 2022 International Electron Devices Meeting (IEDM). IEEE; 2022:26–6.

Li Q, Gu C, Zhu S, Hu Q, Zhao W, Li X, HUANG R, Wu Y. {BEOL-Compatible High-Performance a-IGZO Transistors with Record high I ds, in 2022 International Electron Devices Meeting (IEDM). IEEE; 2022:2–7.

Xiong X, Liu S, Liu H, Chen Y, Shi X, Wang X, Li X, HUANG R, Wu Y. Top-Gate CVD WSe 2 pFETs with Record-High I d\~ 594 $μ$A/$μ$m, G m\~ 244 $μ$S/$μ$m and WSe 2/MoS 2 CFET based Half-adder Circuit Using Monolithic 3D Integration, in 2022 International Electron Devices Meeting (IEDM). IEEE; 2022:20–6.

Shi X, Li X, Guo Q, Gao H, Zeng M, Han Y, Yan S, Wu Y. Improved Self-Heating in Short-Channel Monolayer WS2 Transistors with High-Thermal Conductivity BeO Dielectrics. Nano Letters. 2022;22:7667–7673.

Li X, Zhang Z, Gao T, Shi X, Gu C, Wu Y. Van der Waals Epitaxial Trilayer MoS2 Crystals for High-Speed Electronics. Advanced Functional Materials. 2022;32:2208091.

Hu Q, Gu C, Zhu S, Li Q, Tong A, Kang J, HUANG R, Wu Y. Capacitorless DRAM Cells Based on High-Performance Indium-Tin-Oxide Transistors With Record Data Retention and Reduced Write Latency. IEEE Electron Device Letters. 2022;44:60–63.

Hu Q, Zhu S, Gu C, Wu Y. High-stability flexible radio frequency transistor and mixer based on ultrathin indium tin oxide channel. Applied Physics Letters. 2022;121:242101.

Hu Q, Zhu S, Gu C, Liu S, Zeng M, Wu Y. Ultrashort 15-nm flexible radio frequency ITO transistors enduring mechanical and temperature stress. Science Advances. 2022;8:eade4075.

Xiong X, Kang J, Liu S, Tong A, Fu T, Li X, HUANG R, Wu Y. Nonvolatile logic and ternary content-addressable memory based on complementary black phosphorus and rhenium disulfide Transistors. Advanced Materials. 2022;34:2106321.

Xiong X, Wang X, Hu Q, Li X, Wu Y. Flexible synaptic floating gate devices with dual electrical modulation based on ambipolar black phosphorus. Iscience. 2022;25:103947.

Cai P, Li H, Liu Z, Zhu T, Zeng M, JI Z, Wu Y, Padovani A, Larcher L, Pešić M, et al. Investigation of Coercive Field Shift During Cycling in HfZrOₓ Ferroelectric Capacitors. IEEE Transactions on Electron Devices. 2022;69:2384–2390.

Cheng Z, Pang C-S, Wang P, Le ST, Wu Y, Shahrjerdi D, Radu I, Lemme MC, Peng L-M, Duan X, et al. How to report and benchmark emerging field-effect transistors. Nature Electronics. 2022;5:416–423.

Gao T, Li X, Han L, Wu Y. Tunable synaptic devices based on ambipolar MoTe2 transistor, in 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM). IEEE; 2021:1–3.

Wang X, Shi X, Gu C, Guo Q, Liu H, Li X, Wu Y. High-performance n-type transistors based on CVD-grown large-domain trilayer WSe2. APL Materials. 2021;9:071109.

Xiong X, Tong A, Wang X, Liu S, Li X, HUANG R, Wu Y. Demonstration of Vertically-stacked CVD Monolayer Channels: MoS 2 Nanosheets GAA-FET with I on> 700 $μ$A/$μ$m and MoS2/WSe2 CFET, in 2021 IEEE International Electron Devices Meeting (IEDM). IEEE; 2021:7–5.

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